Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area

In this study, metal contact on p-type SiC with low specific resistance was developed using TiAl. Using fine-tuned TiAl deposition and annealing conditions SiC, the Ti–Si–C interfacial layer grown high temperature ion implanted $\text{P}^{+}$ is nonuniform exhibits nonohmic behavior when area becomes smaller than notation="LaTeX">$10\,\,\mu \text{m}\,\,\times 10\,\,\mu \text{m}$ . This dependence can be improved through low-energy, room-temperature (LERT) implantation Ar plasma treatment prior to deposition. results in a uniform Al–Si–C layer. Moreover, defects produced by LERT promote trap-assisted tunneling. Through aforementioned methods, record-low of notation="LaTeX">$3\times 10^{-{5}}\,\,\Omega $ cm2 at record-small notation="LaTeX">$1.5\,\,\mu 1.5\,\,\mu obtained study.